Memory Products
TSMC
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High Performance SRAM
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High Performance RF
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Ultra Low Leakage SRAM
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High Density SRAM
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High Density RF
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Specialty Memory
High Performance
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Description
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Design Status
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Silicon Status
Single Port Memory Compilers
- Synchronous reads/writes
- Static design with zero standby current (except transistor leakage)
- Ability to compile to multiple aspect ratios
- RAMpiler+® with row and column redundancy of up to 2 quad rows & 2 columns I/O
- No restriction and Fully routable over the array with higher metal layers
- Small set-up and zero hold times
- Power ring size based on frequency of operation and load
- Up to 1.1 Mbit single instance
- Up to 288 bit word
- Up to 16K words deep
- Multiple pin placement and layer options
- Multiple power ring metal layer and configuration options
- Register output options
- Pos. or Neg. Clock Edge
- Multiple output drive strengths
- Different power ring design configurations
- Power ring based on frequency
- Power Mesh on different Metal layers
- Bit Write Mask, Byte Write or Word (global write) options
- Write through, transparent write
- BIST Mux option on inputs
- Row redundancy (RAMpiler+®)
- Column I/O redundancy (RAMpiler+®)
- ECC enabled and capable (SEC, SECDED, OP, EP)
- Front End views are available under NDA
Dual Port Memory Compilers
- Synchronous reads/writes
- Static design with zero standby current (except transistor leakage)
- Ability to compile to multiple aspect ratios
- RAMpiler+® with row and column redundancy of up to 2 quad rows & 2 columns I/O
- No restriction and Fully routable over the array with higher metal layers
- Small set-up and zero hold times
- Power ring size based on frequency of operation and load
- Up to 1.1 Mbit single instance
- Up to 288 bit word
- Up to 16K words deep
- Multiple pin placement and layer options
- Multiple power ring metal layer and configuration options
- Register output options
- Pos. or Neg. Clock Edge
- Multiple output drive strengths
- Different power ring design configurations
- Power ring based on frequency
- Power Mesh on different Metal layers
- Bit Write Mask, Byte Write or Word (global write) options
- Write through, transparent write
- BIST Mux option on inputs
- Row redundancy (RAMpiler+®)
- Column I/O redundancy (RAMpiler+®)
- ECC enabled and capable (SEC, SECDED, OP, EP)
- Front End views are available under NDA